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Patent Assignment Details
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Reel/Frame:011225/0174   Pages: 3
Recorded: 09/05/2000
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
10/02/2001
Application #:
09585543
Filing Dt:
06/02/2000
Title:
Method for forming a deep trench capacitor of a dram cell
Assignor
1
Exec Dt:
05/10/2000
Assignee
1
SCIENCE-BASED INDUSTRIAL PARK
NO. 19, LI, HSIN RD.
HSINCHU, TAIWAN R.O.C
Correspondence name and address
HALE AND DORR LLP
IRAH H. DONNER
1455 PENNSYLVANIA AVENUE, N.W.
WASHINGTON, DC 20004

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