Total properties:
216
Page
3
of
3
Pages:
1 2 3
|
|
Patent #:
|
|
Issue Dt:
|
09/03/2002
|
Application #:
|
09624533
|
Filing Dt:
|
07/24/2000
|
Title:
|
POWER MOS DEVICE WITH BURIED GATE AND GROOVE
|
|
|
Patent #:
|
|
Issue Dt:
|
07/16/2002
|
Application #:
|
09649815
|
Filing Dt:
|
08/28/2000
|
Title:
|
HEAT EXCHANGING CHASSIS
|
|
|
Patent #:
|
|
Issue Dt:
|
02/19/2008
|
Application #:
|
09654845
|
Filing Dt:
|
09/01/2000
|
Title:
|
POWER SEMICONDUCTOR DEVICE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING CAPABILITY AND PROCESS FOR FORMING SAME
|
|
|
Patent #:
|
|
Issue Dt:
|
06/04/2002
|
Application #:
|
09663235
|
Filing Dt:
|
09/15/2000
|
Title:
|
SIMPLIFIED OZONATOR FOR A SEMICONDUCTOR WAFFER CLEANER
|
|
|
Patent #:
|
|
Issue Dt:
|
03/18/2003
|
Application #:
|
09664024
|
Filing Dt:
|
09/19/2000
|
Title:
|
INTEGRATED CIRCUIT DEVICE INCLUDING A DEEP WELL REGION AND ASSOCIATED METHODS
|
|
|
Patent #:
|
|
Issue Dt:
|
07/08/2003
|
Application #:
|
09665850
|
Filing Dt:
|
09/20/2000
|
Title:
|
SELF-ALIGNED PROCESS FOR FABRICATING POWER MOSFET WITH SPACER-SHAPED TERRACED GATE
|
|
|
Patent #:
|
|
Issue Dt:
|
08/13/2002
|
Application #:
|
09689939
|
Filing Dt:
|
10/12/2000
|
Title:
|
MOS-GATED POWER DEVICE HAVING SEGMENTED TRENCH AND EXTENDED DOPING ZONE AND PROCESS FOR FORMING SAME
|
|
|
Patent #:
|
|
Issue Dt:
|
03/19/2002
|
Application #:
|
09718219
|
Filing Dt:
|
11/21/2000
|
Title:
|
Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
09726682
|
Filing Dt:
|
11/30/2000
|
Publication #:
|
|
Pub Dt:
|
05/10/2001
| | | | |
Title:
|
MOS-gated power device having extended trench and doping zone and process for forming same
|
|
|
Patent #:
|
|
Issue Dt:
|
04/02/2002
|
Application #:
|
09731169
|
Filing Dt:
|
12/06/2000
|
Title:
|
MOS-gated power device with doped polysilicon body and process for forming same
|
|
|
Patent #:
|
|
Issue Dt:
|
01/13/2004
|
Application #:
|
09765177
|
Filing Dt:
|
01/18/2001
|
Publication #:
|
|
Pub Dt:
|
05/31/2001
| | | | |
Title:
|
POWER MOS DEVICE WITH INCREASED CHANNEL WIDTH AND PROCESS FOR FORMING SAME
|
|
|
Patent #:
|
|
Issue Dt:
|
09/24/2002
|
Application #:
|
09799845
|
Filing Dt:
|
03/06/2001
|
Publication #:
|
|
Pub Dt:
|
09/20/2001
| | | | |
Title:
|
POWER TRENCH TRANSISTOR DEVICE SOURCE REGION FORMATION USING SILICON SPACER
|
|
|
Patent #:
|
|
Issue Dt:
|
03/26/2002
|
Application #:
|
09815672
|
Filing Dt:
|
03/23/2001
|
Publication #:
|
|
Pub Dt:
|
12/13/2001
| | | | |
Title:
|
Edge termination for silicon power devices
|
|
|
Patent #:
|
|
Issue Dt:
|
04/09/2002
|
Application #:
|
09829634
|
Filing Dt:
|
04/10/2001
|
Publication #:
|
|
Pub Dt:
|
08/23/2001
| | | | |
Title:
|
POTTED TRANSDUCER ARRAY WITH MATCHING NETWORK IN A MULTIPLE PASS CONFIGURATION
|
|
|
Patent #:
|
|
Issue Dt:
|
12/17/2002
|
Application #:
|
09839374
|
Filing Dt:
|
04/20/2001
|
Publication #:
|
|
Pub Dt:
|
10/25/2001
| | | | |
Title:
|
QUASI-RESONANT CONVERTER
|
|
|
Patent #:
|
|
Issue Dt:
|
07/26/2005
|
Application #:
|
09844347
|
Filing Dt:
|
04/27/2001
|
Publication #:
|
|
Pub Dt:
|
01/24/2002
| | | | |
Title:
|
POWER MOSFET AND METHOD FOR FORMING SAME USING A SELF-ALIGNED BODY IMPLANT
|
|