skip navigationU S P T O SealUnited States Patent and Trademark Office AOTW logo
Home|Site Index|Search|Guides|Contacts|eBusiness|eBiz alerts|News|Help
Assignments on the Web > Patent Query
Patent Assignment Details
NOTE:Results display only for issued patents and published applications. For pending or abandoned applications please consult USPTO staff.

Reel/Frame:019028/0656   Pages: 6
Recorded: 03/19/2007
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 35
1
Patent #:
Issue Dt:
06/13/2000
Application #:
09189227
Filing Dt:
11/11/1998
Title:
LPCVD OXIDE AND RTA FOR TOP OXIDE OF ONO FILM TO IMPROVE RELIABILITY FOR FLASH MEMORY DEVICES
2
Patent #:
Issue Dt:
04/17/2001
Application #:
09198654
Filing Dt:
11/24/1998
Title:
METHOD FOR FABRICATING A HIGH-DENSITY AND HIGH-RELIABILITY EEPROM DEVICE
3
Patent #:
Issue Dt:
05/29/2001
Application #:
09199772
Filing Dt:
11/25/1998
Title:
METHOD FOR IMPROVING ELECTROSTATIC DISCHARGE ( ESD) ROBUSTNESS
4
Patent #:
Issue Dt:
04/30/2002
Application #:
09205899
Filing Dt:
12/04/1998
Title:
METHOD OF FORMING ONO STACKED FILMS AND DCS TUNGSTEN SILICIDE GATE TO IMPROVE POLYCIDE GATE PERFORMANCE FOR FLASH MEMORY DEVICES
5
Patent #:
Issue Dt:
12/23/2003
Application #:
09252186
Filing Dt:
02/18/1999
Title:
LOW DIELECTRIC METAL SILICIDE LINED INTERCONNECTION SYSTEM
6
Patent #:
Issue Dt:
02/13/2001
Application #:
09307259
Filing Dt:
05/06/1999
Title:
RAMPED OR STEPPED GATE CHANNEL ERASE FOR FLASH MEMORY APPLICATION
7
Patent #:
Issue Dt:
01/09/2001
Application #:
09370380
Filing Dt:
08/09/1999
Title:
RAMPED GATE TECHNIQUE FOR SOFT PROGRAMMING TO TIGHTEN THE VT DISTRIBUTION
8
Patent #:
Issue Dt:
06/10/2003
Application #:
09387710
Filing Dt:
08/30/1999
Title:
INTEGRATED CIRCUIT HAVING OPTIMIZED GATE COUPLING CAPACITANCE
9
Patent #:
Issue Dt:
10/31/2000
Application #:
09389161
Filing Dt:
09/02/1999
Title:
1 TRANSISTOR CELL FOR EEPROM APPLICATION
10
Patent #:
Issue Dt:
11/27/2001
Application #:
09390052
Filing Dt:
09/03/1999
Title:
FLASH MEMORY DEVICE AND FABRICATION METHOD HAVING A HIGH COUPLING RATIO
11
Patent #:
Issue Dt:
04/11/2000
Application #:
09404080
Filing Dt:
09/23/1999
Title:
OPERATIONAL APPROACH FOR THE SUPPRESSION OF BI-DIRECTIONAL TUNNEL OXIDE STRESS OF A FLASH CELL
12
Patent #:
Issue Dt:
07/03/2001
Application #:
09420220
Filing Dt:
10/18/1999
Title:
NITRIDE PLUG TO REDUCE GATE EDGE LIFTING
13
Patent #:
Issue Dt:
11/14/2000
Application #:
09430336
Filing Dt:
10/29/1999
Title:
BIASING SCHEME TO REDUCE STRESS ON NON-SELECTED CELLS DURING READ
14
Patent #:
Issue Dt:
12/11/2001
Application #:
09430410
Filing Dt:
10/29/1999
Title:
SOLID-SOURCE DOPING FOR SOURCE/DRAIN TO ELIMINATE IMPLANT DAMAGE
15
Patent #:
Issue Dt:
05/29/2001
Application #:
09476584
Filing Dt:
01/03/2000
Title:
USE OF ETCH TO BLUNT GATE CORNERS
16
Patent #:
Issue Dt:
02/11/2003
Application #:
09476906
Filing Dt:
01/03/2000
Title:
DEPOSITED SCREEN OXIDE FOR REDUCING GATE EDGE LIFTING
17
Patent #:
Issue Dt:
12/12/2000
Application #:
09490351
Filing Dt:
01/24/2000
Title:
METHOD TO PROVIDE A REDUCED CONSTANT E-FIELD DURING ERASE OF EEPROMS FOR RELIABILITY IMPROVEMENT
18
Patent #:
Issue Dt:
01/23/2001
Application #:
09490352
Filing Dt:
01/24/2000
Title:
Background correction for charge gain and loss
19
Patent #:
Issue Dt:
10/24/2000
Application #:
09490353
Filing Dt:
01/24/2000
Title:
Reduction of oxide stress through the use of forward biased body voltage
20
Patent #:
Issue Dt:
09/25/2001
Application #:
09495213
Filing Dt:
01/31/2000
Title:
Nitridization of the pre-ddi screen oxide
21
Patent #:
Issue Dt:
05/29/2001
Application #:
09495214
Filing Dt:
01/31/2000
Title:
Method to reduce read gate disturb for flash eeprom application
22
Patent #:
Issue Dt:
03/06/2001
Application #:
09495215
Filing Dt:
01/31/2000
Title:
APDE scheme for flash memory application
23
Patent #:
Issue Dt:
09/04/2001
Application #:
09495216
Filing Dt:
01/31/2000
Title:
Erase scheme to tighten the threshold voltage distribution of EEPROM flash memory cells
24
Patent #:
Issue Dt:
01/27/2004
Application #:
09504087
Filing Dt:
02/15/2000
Title:
INTEGRATED CIRCUIT HAVING INCREASED GATE COUPLING CAPACITANCE
25
Patent #:
Issue Dt:
06/25/2002
Application #:
09507810
Filing Dt:
02/22/2000
Title:
METHOD FOR REMOVING SEMICONDUCTOR ARC USING ARC CMP BUFFING
26
Patent #:
Issue Dt:
03/27/2001
Application #:
09516472
Filing Dt:
03/01/2000
Title:
FLASH MEMORY CELLS HAVING A MODULATION DOPED HETEROJUNCTION STRUCTURE
27
Patent #:
Issue Dt:
02/12/2002
Application #:
09538168
Filing Dt:
03/30/2000
Title:
Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation
28
Patent #:
Issue Dt:
03/11/2003
Application #:
09543484
Filing Dt:
04/06/2000
Title:
USE OF GASEOUS SILICON HYDRIDES AS A REDUCING AGENT TO REMOVE RE-SPUTTERED SILICON OXIDE
29
Patent #:
Issue Dt:
05/15/2001
Application #:
09543991
Filing Dt:
04/06/2000
Title:
New method to fabricate a high coupling flash cell with less silicide seam problem
30
Patent #:
Issue Dt:
06/17/2003
Application #:
09619231
Filing Dt:
07/19/2000
Title:
ELIMINATION OF N+ CONTACT IMPLANT FROM FLASH TECHNOLOGIES BY REPLACEMENT WITH STANDARD DOUBLE-DIFFUSED AND N+ IMPLANTS
31
Patent #:
Issue Dt:
09/17/2002
Application #:
09693649
Filing Dt:
10/21/2000
Title:
FEEDBACK METHOD TO OPTIMIZE ELECTRIC FIELD DURING CHANNEL ERASE OF FLASH MEMORY DEVICES
32
Patent #:
Issue Dt:
05/15/2001
Application #:
09693650
Filing Dt:
10/21/2000
Title:
Self-limiting multi-level programming states
33
Patent #:
Issue Dt:
08/27/2002
Application #:
09704026
Filing Dt:
11/01/2000
Title:
PHOTORESIST SPACER PROCESS SIMPLIFICATION TO ELIMINATE THE STANDARD POLYSILICON OR OXIDE SPACER PROCESS FOR FLASH MEMORY CIRCUITS
34
Patent #:
Issue Dt:
08/21/2001
Application #:
09708982
Filing Dt:
11/01/2000
Title:
Elimination of N+ implant from flash technologies by replacement with standard medium-doped-drain (Mdd) implant
35
Patent #:
Issue Dt:
04/15/2003
Application #:
10067765
Filing Dt:
02/08/2002
Publication #:
Pub Dt:
06/13/2002
Title:
PLANARIZATION OF A POLYSILICON LAYER SURFACE BY CHEMICAL MECHANICAL POLISH TO IMPROVE LITHOGRAPHY AND SILICIDE FORMATION
Assignor
1
Exec Dt:
01/31/2007
Assignee
1
915 DEGUIGNE DRIVE, P.O. BOX 3453
MAIL STOP 250
SUNNYVALE, CALIFORNIA 94088-3453
Correspondence name and address
RAYMOND E. FRITZ
915 DEGUIGNE DRIVE, P.O. BOX 3453
MAIL STOP 250
SUNNYVALE, CA 94088-3453

Search Results as of: 05/27/2024 04:36 AM
If you have any comments or questions concerning the data displayed, contact PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified: August 25, 2017 v.2.6
| .HOME | INDEX| SEARCH | eBUSINESS | CONTACT US | PRIVACY STATEMENT