Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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04/20/1999
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Application #:
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08958101
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Filing Dt:
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10/27/1997
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Inventor:
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NIEN CHAO YANG
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Title:
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MEMORY REDUNDANCY CIRCUIT FOR HIGH DENSITY MEMORY WITH EXTRA ROW AND COLUMN FOR FAILED ADDRESS STORAGE
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO.3 CREATION ROAD 3RD |
| HSINCHU, TAIWAN R.O.C |
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| WILSON SONSINI GOODRICH & ROSATI |
| MARK A. HAYNES |
| 650 PAGE MILL ROAD |
| PALO ALTO, CA 94304-1050 |
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