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Reel/Frame:047907/0629   Pages: 10
Recorded: 01/04/2019
Attorney Dkt #:M1374.70081 FAMILY
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 12
1
Patent #:
Issue Dt:
11/18/2003
Application #:
09736972
Filing Dt:
12/14/2000
Publication #:
Pub Dt:
06/20/2002
Title:
GALLIUM NITRIDE MATERIALS AND METHODS
2
Patent #:
Issue Dt:
09/09/2003
Application #:
10188814
Filing Dt:
07/02/2002
Publication #:
Pub Dt:
12/12/2002
Title:
GALLIUM NITRIDE MATERIALS AND METHODS
3
Patent #:
Issue Dt:
01/31/2012
Application #:
12343616
Filing Dt:
12/24/2008
Publication #:
Pub Dt:
04/23/2009
Title:
GALLIUM NITRIDE MATERIALS AND METHODS
4
Patent #:
Issue Dt:
01/01/2013
Application #:
13359892
Filing Dt:
01/27/2012
Publication #:
Pub Dt:
05/17/2012
Title:
GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES WITH COMPOSITIONALLY-GRADED TRANSITION LAYER
5
Patent #:
Issue Dt:
11/26/2013
Application #:
13728956
Filing Dt:
12/27/2012
Publication #:
Pub Dt:
05/09/2013
Title:
GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES WITH COMPOSITIONALLY-GRADED TRANSITION LAYER
6
Patent #:
Issue Dt:
01/20/2015
Application #:
14083923
Filing Dt:
11/19/2013
Publication #:
Pub Dt:
05/15/2014
Title:
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
7
Patent #:
Issue Dt:
01/06/2015
Application #:
14084251
Filing Dt:
11/19/2013
Publication #:
Pub Dt:
03/20/2014
Title:
GALLIUM NITRIDE DEVICES WITH ALUMINUM NITRIDE ALLOY INTERMEDIATE LAYER
8
Patent #:
Issue Dt:
01/06/2015
Application #:
14084429
Filing Dt:
11/19/2013
Publication #:
Pub Dt:
04/10/2014
Title:
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
9
Patent #:
Issue Dt:
06/23/2015
Application #:
14452203
Filing Dt:
08/05/2014
Publication #:
Pub Dt:
12/04/2014
Title:
Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
10
Patent #:
Issue Dt:
09/06/2016
Application #:
14579738
Filing Dt:
12/22/2014
Publication #:
Pub Dt:
04/23/2015
Title:
Gallium Nitride Devices with Discontinuously Graded Transition Layer
11
Patent #:
Issue Dt:
10/04/2016
Application #:
14580064
Filing Dt:
12/22/2014
Publication #:
Pub Dt:
07/02/2015
Title:
Semiconductor Structure with Compositionally-Graded Transition Layer
12
Patent #:
Issue Dt:
09/06/2016
Application #:
14743218
Filing Dt:
06/18/2015
Publication #:
Pub Dt:
10/08/2015
Title:
III-Nitride Based Semiconductor Structure
Assignor
1
Exec Dt:
10/11/2018
Assignee
1
100 CHELMSFORD STREET
LOWELL, MASSACHUSETTS 01851
Correspondence name and address
WOLF GREENFIELD & SACKS P.C.
600 ATLANTIC AVENUE
BOSTON, MA 02210

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