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Patent Assignment Details

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Reel/Frame:	057034/0109			Pages:	7
		Recorded:	07/30/2021
Attorney Dkt #:	SILICON PATENT HLDS_SCI
Conveyance:	ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).

Total properties: 9

Patent #:	6545316	Issue Dt:	04/08/2003	Application #:	09602414	Filing Dt:	06/23/2000
Title:	MOSFET DEVICES HAVING LINEAR TRANSFER CHARACTERISTICS WHEN OPERATING IN VELOCITY SATURATION MODE AND METHODS OF FORMING AND OPERATING SAME

Patent #:	6781194	Issue Dt:	08/24/2004	Application #:	09833132	Filing Dt:	04/11/2001
Publication #:	US20020175351	Pub Dt:	11/28/2002
Title:	POWER DEVICES HAVING RETROGRADED-DOPED TRANSITION REGIONS AND INSULATED TRENCH-BASED ELECTRODES THEREIN

Patent #:	6621121	Issue Dt:	09/16/2003	Application #:	09995019	Filing Dt:	11/26/2001
Publication #:	US20020036319	Pub Dt:	03/28/2002
Title:	VERTICAL MOSFETS HAVING TRENCH-BASED GATE ELECTRODES WITHIN DEEPER TRENCH-BASED SOURCE ELECTRODES AND METHODS OF FORMING SAME

Patent #:	6791143	Issue Dt:	09/14/2004	Application #:	10008171	Filing Dt:	10/19/2001
Publication #:	US20020177277	Pub Dt:	11/28/2002
Title:	POWER SEMICONDUCTOR DEVICES HAVING LATERALLY EXTENDING BASE SHIELDING REGIONS THAT INHIBIT BASE REACH-THROUGH

Patent #:	6784486	Issue Dt:	08/31/2004	Application #:	10199583	Filing Dt:	07/19/2002
Publication #:	US20020185679	Pub Dt:	12/12/2002
Title:	VERTICAL POWER DEVICES HAVING RETROGRADED-DOPED TRANSITION REGIONS THEREIN

Patent #:	6764889	Issue Dt:	07/20/2004	Application #:	10621668	Filing Dt:	07/17/2003
Publication #:	US20040016963	Pub Dt:	01/29/2004
Title:	METHODS OF FORMING VERTICAL MOSFETS HAVING TRENCH-BASED GATE ELECTRODES WITHIN DEEPER TRENCH-BASED SOURCE ELECTRODES

Patent #:	6800897	Issue Dt:	10/05/2004	Application #:	10671333	Filing Dt:	09/24/2003
Publication #:	US20040099905	Pub Dt:	05/27/2004
Title:	INTEGRATED CIRCUIT POWER DEVICES HAVING JUNCTION BARRIER CONTROLLED SCHOTTKY DIODES THEREIN

Patent #:	NONE	Issue Dt:		Application #:	10856417	Filing Dt:	05/28/2004
Publication #:	US20050001268	Pub Dt:	01/06/2005
Title:	Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same

Patent #:	7041559	Issue Dt:	05/09/2006	Application #:	10936757	Filing Dt:	09/08/2004
Publication #:	US20050032291	Pub Dt:	02/10/2005
Title:	METHODS OF FORMING POWER SEMICONDUCTOR DEVICES HAVING LATERALLY EXTENDING BASE SHIELDING REGIONS

Assignor

Exec Dt:

07/22/2021

Assignee

5005 E. MCDOWELL ROAD, MD A700

PHOENIX, ARIZONA 85008

Correspondence name and address
	SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
	5005 E. MCDOWELL ROAD
	MD A700
	PHOENIX, AZ 85008

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