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Patent #:
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Issue Dt:
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11/23/1993
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Application #:
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07715400
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Filing Dt:
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06/14/1991
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Title:
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JUNCTION FIELD-EFFECT TRANSISTOR FORMED IN SILICON CARBIDE
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Patent #:
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Issue Dt:
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11/07/1995
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Application #:
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07798219
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Filing Dt:
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11/26/1991
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Title:
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NONVOLATILE RANDOM ACCESS MEMORY DEVICE HAVING TRANSISTOR AND CAPACITOR MADE IN SILICON CARBIDE SUBSTRATE
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Patent #:
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Issue Dt:
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10/17/1995
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Application #:
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07893642
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Filing Dt:
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06/05/1992
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Title:
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METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
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Patent #:
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Issue Dt:
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03/10/1998
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Application #:
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07925823
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Filing Dt:
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08/07/1992
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Title:
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SILICON CARBIDE MOSFET HAVING SELF-ALIGNED GATE STRUCTURE
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Patent #:
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Issue Dt:
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07/23/1996
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Application #:
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08103866
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Filing Dt:
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08/09/1993
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Title:
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SILICON CARBIDE THYRISTOR
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Patent #:
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Issue Dt:
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10/21/1997
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Application #:
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08188469
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Filing Dt:
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01/27/1994
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Title:
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A METHOD OF MAKING A SINGLE CRYSTALS GA*N ARTICLE
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Patent #:
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Issue Dt:
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02/28/1995
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08198679
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Filing Dt:
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02/18/1994
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Title:
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SILICON CARBIDE PHOTODIODE WITH IMPROVED SHORT WAVELENGTH RESPONSE AND VERY LOW LEAKAGE CURRENT
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Patent #:
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Issue Dt:
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11/11/1997
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Application #:
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08307173
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Filing Dt:
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09/16/1994
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Title:
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SELF-ALIGNED FIELD-EFFECT TRANSISTOR FOR HIGH FREQUENCY APPLICATIONS
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Patent #:
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Issue Dt:
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05/13/1997
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Application #:
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08352887
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Filing Dt:
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12/09/1994
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Title:
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METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
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Patent #:
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Issue Dt:
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03/18/1997
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Application #:
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08353456
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Filing Dt:
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12/09/1994
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Title:
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METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
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Patent #:
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Issue Dt:
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10/26/1999
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Application #:
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08554319
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Filing Dt:
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11/08/1995
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Title:
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PROCESS FOR REDUCING DEFECTS IN OXIDE LAYERS ON SILICON CARBIDE
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Patent #:
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Issue Dt:
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10/07/1997
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Application #:
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08636952
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Filing Dt:
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04/24/1996
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Title:
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METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE BY THE USE OF AN IMPLANTING STEP
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Patent #:
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Issue Dt:
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02/17/1998
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Application #:
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08659412
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Filing Dt:
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06/06/1996
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Title:
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SILICON CARBIDE METAL-INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
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Patent #:
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Issue Dt:
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07/07/1998
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Application #:
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08752716
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Filing Dt:
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11/19/1996
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Title:
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METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
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Patent #:
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Issue Dt:
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11/03/1998
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Application #:
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08939710
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Filing Dt:
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09/29/1997
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Title:
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SILICON CARBIDE METAL-INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
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Patent #:
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Issue Dt:
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07/13/1999
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Application #:
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08953420
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Filing Dt:
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10/17/1997
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Title:
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FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SIC AND A METHOD FOR PRODUCTION THEREOF
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Patent #:
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Issue Dt:
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12/05/2000
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Application #:
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08984473
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Filing Dt:
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12/03/1997
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Title:
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GAN-BASED DEVICES USING (GA, AL, IN)N BASE LAYERS
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Patent #:
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Issue Dt:
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11/13/2001
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Application #:
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09096967
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Filing Dt:
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06/12/1998
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Title:
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NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
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Patent #:
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Issue Dt:
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06/12/2001
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09141795
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Filing Dt:
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08/28/1998
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Title:
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LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
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Patent #:
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Issue Dt:
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08/27/2002
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09179049
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Filing Dt:
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10/26/1998
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Title:
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LOW DEFECT DENSITY (GA, AL, IN)N AND HVPE PROCESS FOR MAKING SAME
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Patent #:
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Issue Dt:
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10/03/2000
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Application #:
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09247469
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Filing Dt:
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02/08/1999
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Title:
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A LATERAL FIELD EFFECT TRANSISTOR OF SIC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR
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Patent #:
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Issue Dt:
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08/21/2001
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Application #:
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09298116
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Filing Dt:
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04/23/1999
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Title:
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FIELD EFFECT TRANSISTOR OF SIC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF
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Patent #:
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Issue Dt:
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07/22/2003
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Application #:
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09524062
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Filing Dt:
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03/13/2000
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Title:
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III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
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Patent #:
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Issue Dt:
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11/05/2002
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Application #:
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09546821
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Filing Dt:
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04/11/2000
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Title:
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Method of forming vias in silicon carbide and resulting devices and circuits
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Patent #:
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Issue Dt:
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09/10/2002
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Application #:
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09605195
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Filing Dt:
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06/28/2000
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Title:
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METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
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Patent #:
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Issue Dt:
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04/27/2004
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Application #:
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09633598
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Filing Dt:
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08/07/2000
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Title:
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INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS, AND METHOD OF MAKING THE SAME
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Patent #:
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Issue Dt:
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03/18/2003
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Application #:
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09656595
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Filing Dt:
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09/07/2000
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Title:
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GAN-BASED DEVICES USING THICK (GA, AL, IN)N BASE LAYERS
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Patent #:
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Issue Dt:
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11/26/2002
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Application #:
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09701951
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02/16/2001
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Title:
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NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
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Patent #:
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08/20/2002
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09781732
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02/12/2001
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Pub Dt:
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07/26/2001
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Title:
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LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
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04/26/2005
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09787189
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03/15/2001
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06/24/2003
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09821360
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03/29/2001
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Pub Dt:
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08/30/2001
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Title:
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NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
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Patent #:
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12/03/2002
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09877437
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06/08/2001
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12/12/2002
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Title:
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HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
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12/06/2005
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09929789
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08/14/2001
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03/07/2002
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Title:
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BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
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07/20/2004
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09933943
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08/21/2001
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12/27/2001
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Title:
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BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
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10/25/2005
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09947253
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09/05/2001
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06/06/2002
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FREE-STANDING (AL, GA, IN)N AND PARTING METHOD FOR FORMING SAME
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02/04/2003
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09992766
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11/06/2001
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06/06/2002
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Title:
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METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
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10/12/2004
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10003331
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10/31/2001
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12/05/2002
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LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
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11/18/2003
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10007431
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11/08/2001
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05/09/2002
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METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
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03/04/2003
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10083071
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02/26/2002
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10/24/2002
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LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
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09/13/2005
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10103226
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03/21/2002
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11/14/2002
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LOW DEFECT DENSITY (GA, AL, IN) N AND HVPE PROCESS FOR MAKING SAME
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04/05/2011
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10107001
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03/25/2002
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09/25/2003
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DOPED GROUP III-V NITRIDE MATERIALS, AND MICROELECTRONIC DEVICES AND DEVICE PRECURSOR STRUCTURES COMPRISING SAME
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09/20/2005
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10249448
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04/10/2003
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12/02/2004
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10/04/2005
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10272761
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10/17/2002
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07/10/2003
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HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
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07/03/2012
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10313561
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12/06/2002
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11/20/2003
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III-V NITRIDE HOMOEPITAXIAL MATERIAL OF IMPROVED QUALITY FORMED ON FREE-STANDING (AL,IN,GA)N SUBSTRATES
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02/02/2010
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02/19/2003
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08/21/2003
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09/14/2010
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10513009
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10/27/2004
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08/04/2005
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01/12/2010
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03/06/2006
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11/09/2006
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01/30/2007
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10618024
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07/11/2003
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01/13/2005
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04/25/2006
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01/22/2004
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07/28/2005
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01/29/2008
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11/13/2003
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05/19/2005
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10/10/2006
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11/14/2003
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05/19/2005
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06/21/2005
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03/12/2004
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09/02/2004
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LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
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10/24/2006
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02/25/2005
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03/30/2006
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METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
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01/13/2009
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03/30/2005
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10/12/2006
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07/29/2008
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12/14/2006
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04/28/2009
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01/04/2007
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05/03/2016
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06/29/2005
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01/04/2007
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Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
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08/03/2010
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07/20/2005
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01/25/2007
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10/15/2013
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08/24/2005
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INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS, AND METHOD OF MAKING THE SAME
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02/19/2008
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02/16/2006
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04/12/2011
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06/29/2006
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Title:
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SILICON CARBIDE LAYER ON DIAMOND SUBSTRATE FOR SUPPORTING GROUP III NITRIDE HETEROSTRUCTURE DEVICE
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Patent #:
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Issue Dt:
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06/24/2008
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Application #:
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11431990
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Filing Dt:
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05/11/2006
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Publication #:
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Pub Dt:
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10/12/2006
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Title:
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VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
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Patent #:
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Issue Dt:
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06/01/2010
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Application #:
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11444106
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Filing Dt:
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05/31/2006
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Publication #:
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Pub Dt:
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12/06/2007
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Title:
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SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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04/13/2010
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Application #:
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11462016
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Filing Dt:
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08/02/2006
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Publication #:
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Pub Dt:
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01/25/2007
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Title:
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REDUCED LEAKAGE POWER DEVICES BY INVERSION LAYER SURFACE PASSIVATION
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Patent #:
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Issue Dt:
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02/22/2011
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Application #:
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11551286
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Filing Dt:
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10/20/2006
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Publication #:
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Pub Dt:
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04/23/2009
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Title:
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METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
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Patent #:
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Issue Dt:
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03/04/2014
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Application #:
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11651528
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Filing Dt:
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01/10/2007
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Publication #:
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Pub Dt:
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08/30/2007
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Title:
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SILICON CARBIDE DIMPLED SUBSTRATE
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Patent #:
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Issue Dt:
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11/16/2010
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Application #:
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11661962
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Filing Dt:
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03/01/2007
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Publication #:
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Pub Dt:
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11/15/2007
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Title:
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LATERAL FIELD EFFECT TRANSISTOR AND ITS FABRICATION COMPRISING A SPACER LAYER ABOVE AND BELOW THE CHANNEL LAYER
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Patent #:
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Issue Dt:
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02/26/2013
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Application #:
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11673117
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Filing Dt:
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02/09/2007
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Publication #:
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Pub Dt:
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08/14/2008
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Title:
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SCHOTTKY DIODE STRUCTURE WITH SILICON MESA AND JUNCTION BARRIER SCHOTTKY WELLS
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Patent #:
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Issue Dt:
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12/29/2009
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Application #:
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11685761
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Filing Dt:
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03/13/2007
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Publication #:
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Pub Dt:
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09/18/2008
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Title:
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GRADED DIELECTRIC LAYER
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Patent #:
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Issue Dt:
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12/08/2009
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Application #:
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11711703
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Filing Dt:
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02/28/2007
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Publication #:
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Pub Dt:
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08/28/2008
| | | | |
Title:
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SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS
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Patent #:
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Issue Dt:
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05/07/2013
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Application #:
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11753483
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Filing Dt:
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05/24/2007
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Publication #:
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Pub Dt:
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11/27/2008
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Title:
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MICROSCALE OPTOELECTRONIC DEVICE PACKAGES
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Patent #:
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Issue Dt:
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12/21/2010
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Application #:
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11845805
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Filing Dt:
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08/28/2007
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Publication #:
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Pub Dt:
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02/14/2008
| | | | |
Title:
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PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
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Patent #:
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Issue Dt:
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01/25/2011
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Application #:
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11846605
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Filing Dt:
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08/29/2007
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Publication #:
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Pub Dt:
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03/05/2009
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Title:
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HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS
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Patent #:
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Issue Dt:
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04/16/2013
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Application #:
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11855595
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Filing Dt:
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09/14/2007
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Publication #:
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Pub Dt:
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03/19/2009
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Title:
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GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
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Patent #:
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Issue Dt:
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02/01/2011
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Application #:
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11856222
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Filing Dt:
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09/17/2007
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Publication #:
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Pub Dt:
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01/03/2008
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Title:
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LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
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Patent #:
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Issue Dt:
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12/27/2011
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Application #:
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11949221
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Filing Dt:
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12/03/2007
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Publication #:
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Pub Dt:
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06/04/2009
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Title:
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SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE
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Patent #:
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Issue Dt:
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08/02/2011
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Application #:
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11952447
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Filing Dt:
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12/07/2007
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Publication #:
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Pub Dt:
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06/11/2009
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Title:
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TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION
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Patent #:
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Issue Dt:
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05/05/2015
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Application #:
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11956366
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Filing Dt:
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12/14/2007
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Publication #:
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Pub Dt:
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05/30/2013
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Title:
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Metallization structure for high power microelectronic devices
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Patent #:
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Issue Dt:
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09/14/2010
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Application #:
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12019690
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Filing Dt:
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01/25/2008
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Publication #:
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Pub Dt:
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07/30/2009
| | | | |
Title:
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SEMICONDUCTOR TRANSISTOR WITH P TYPE RE-GROWN CHANNEL LAYER
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Patent #:
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Issue Dt:
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01/25/2011
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Application #:
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12020731
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Filing Dt:
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01/28/2008
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Publication #:
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Pub Dt:
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05/22/2008
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Title:
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SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES
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Patent #:
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Issue Dt:
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07/05/2011
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Application #:
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12026552
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Filing Dt:
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02/05/2008
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Publication #:
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Pub Dt:
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05/29/2008
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Title:
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LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
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Patent #:
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Issue Dt:
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09/14/2010
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Application #:
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12030198
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Filing Dt:
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02/12/2008
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Publication #:
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Pub Dt:
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06/05/2008
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Title:
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BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
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Patent #:
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Issue Dt:
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04/20/2010
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Application #:
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12102275
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Filing Dt:
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04/14/2008
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Publication #:
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Pub Dt:
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08/21/2008
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Title:
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VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
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Patent #:
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Issue Dt:
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02/16/2010
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Application #:
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12118947
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Filing Dt:
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05/12/2008
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Publication #:
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Pub Dt:
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12/11/2008
| | | | |
Title:
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HIGHLY UNIFORM GROUP III NITRIDE EPITAXIAL LAYERS ON 100 MILLIMETER DIAMETER SILICON CARBIDE SUBSTRATES
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Patent #:
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Issue Dt:
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07/31/2012
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Application #:
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12124341
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Filing Dt:
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05/21/2008
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Publication #:
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Pub Dt:
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11/26/2009
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Title:
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JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY
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Patent #:
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Issue Dt:
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12/28/2010
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Application #:
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12404557
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Filing Dt:
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03/16/2009
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Publication #:
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Pub Dt:
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08/27/2009
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Title:
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PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
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Patent #:
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Issue Dt:
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01/04/2011
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Application #:
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12504725
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Filing Dt:
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07/17/2009
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Publication #:
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Pub Dt:
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11/05/2009
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Title:
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SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS
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Patent #:
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Issue Dt:
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08/09/2011
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Application #:
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12603603
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Filing Dt:
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10/22/2009
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Pub Dt:
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02/18/2010
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Title:
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METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS
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Patent #:
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Issue Dt:
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03/29/2011
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12698144
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02/02/2010
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Pub Dt:
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11/18/2010
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Title:
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III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
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10/25/2011
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12713514
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02/26/2010
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Pub Dt:
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06/17/2010
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Title:
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VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
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08/25/2015
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12719412
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03/08/2010
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Pub Dt:
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09/08/2011
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Title:
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SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHODS OF FABRICATING SAME
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10/08/2013
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12840583
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07/21/2010
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01/26/2012
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ELECTRONIC DEVICE STRUCTURE INCLUDING A BUFFER LAYER ON A BASE LAYER
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08/19/2014
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12843113
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07/26/2010
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01/26/2012
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ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SURFACE PASSIVATION
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08/26/2014
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12850098
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08/04/2010
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02/09/2012
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CIRCUIT BREAKER
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05/08/2012
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12852223
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08/06/2010
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12/02/2010
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HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
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03/28/2017
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12943517
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11/10/2010
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05/10/2012
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CONTACT PAD
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08/20/2013
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12952278
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11/23/2010
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03/17/2011
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Title:
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WAFER PRECURSOR PREPARED FOR GROUP III NITRIDE EPITAXIAL GROWTH ON A COMPOSITE SUBSTRATE HAVING DIAMOND AND SILICON CARBIDE LAYERS, AND SEMICONDUCTOR LASER FORMED THEREON
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05/20/2014
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13008008
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01/17/2011
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06/16/2011
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Title:
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LOW DISLOCATION DENSITY III-V NITRIDE SUBSTRATE INCLUDING FILLED PITS AND PROCESS FOR MAKING THE SAME
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